Ukrainian Journal of Physical Optics 

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Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review

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Strikha M. V.

Abstract. I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1–x)O3 (PZT) ceramic) substrates. The system ‘graphene-on-ferroelectric substrate’ has unique ad-vantages in comparison with the graphene deposited on SiO2 or on dielectrics with high dielectric permittivity. In particular, one can obtain high (~ 1012 cm–2) carrier concentrations in the doped graphene-on-ferroelectric structures for moderate (of the order of 1 V) gate voltages. The existence of a hysteresis (or anti-hysteresis) in the dependence of electrical resistance of graphene channel on the gate voltage facili-tates creating bistable systems for different applications. The use of ferroelectric substrates has already enabled developing of robust elements of non-volatile mem-ory of a new generation. These elements operate for more than 105 switching cycles and store information for more than 103 s. Such systems can be characterised theo-retically by ultrafast switching rates (~ 10–100 fs). A theoretical analysis has also demonstrated that the structures ‘graphene-on-PZT ferroelectric substrate’ would re-sult in developing efficient and fast small-sized modulators of mid-IR and near-IR radiations for different optoelectronic applications. 

Keywords: graphene, ferroelectrics, non-volatile memory, modulators

UDC: 535.8, 535.3, 535.243, 537.226
PACS: 73.22.Pr, 78.67.Wj, 85.50.-n
Ukr. J. Phys. Opt. 13, Suppl.3, S5-S26 
doi: 10.3116/16091833/13/1/S5/2012
Received: 29.02.2011

Анотація. Подано огляд експериментальних і теоретичних робіт за останні три роки, у яких вивчають властивості та можливі застосування графену на сегнетоелектричній підкладці (органічному сегнетоелектрику або кераміці Pb(ZrxTi1–x)O3 (скорочено PZT)). Графен на сегнетоелектричній підкладці має декілька унікальних переваг, порівняно з графеном на підкладці SiO2 або на діелектриках з високою діелектричною проникністю. У легованому затвором графені на сегнетоелектрику можна одержати високі (~ 1012 cм–2) концентрації носіїв для невисоких (порядку 1 В) напруг на затворі. Наявність гістерезису (або антигістерезису) на залежності питомого опору графенового каналу від напруги на затворі дає змогу створювати бістабільні системи для різних застосувань. Використання сегнетоелектричних підкладок для графену уможливило створення надійних елементів енергонезалежної пам’яті нового покоління. Ці елементи витримують понад 105 перемикань, працюють і зберігають інформацію упродовж понад 103 с. Теоретично їх можна характеризувати ультрашвидким перемиканням (~ 10–100 фс). Теоретично також було доведено, що на основі графену на сегнетоелектричній підкладці PZT можна створити ефективні, швидкодійні й мініатюрні модулятори випромінювання близького та середнього ІЧ-діапазонів. 
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