Ukrainian Journal of Physical Optics 

Home page
 
 

Other articles 

in this issue
Faraday effect in TlInS2 crystals

1Adamenko D., 1Vasylkiv Yu., 2Pogodin A., 2Kokhan O. and 1Vlokh R.

1Vlokh Institute of Physical Optics, 23 Dragomanov Street, 79005 Lviv, Ukraine
2Department for Inorganic Chemistry, Uzhgorod National University, 46 Pidhirna Street, 88000 Uzhgorod, Ukraine

Download this article

Abstract. We have studied experimentally the Faraday effect in TlInS2 crystals. The Verdet constant VF  and the effective Faraday coefficient F'33  are determined at the light wavelength l=632.8nm under normal conditions. These parameters are equal to VF=(112.4±1.5)rad/(T×m) and F'33=0.9995F33+0.0005F11= (12.96±0.18)×10-13m/A, respectively. We have shown that, among magnetically non-ordered substances, TlInS2 represents an efficient magnetooptic material.

Keywords: Faraday effect, TlInS2 crystals, Verdet constant

PACS: 33.55.Ad
UDC: 537.632.4
Ukr. J. Phys. Opt. 18 197-200
doi: 10.3116/16091833/18/4/197/2017
Received: 17.08.2017

Анотація. Експериментально досліджено ефект Фарадея в кристалах TlInS2. Для довжини хвилі оптичного випромінювання l=632.8нм і за нормальних умов визначено сталу Верде і ефективну компоненту тензора ефекту Фарадея. Вони дорівнюють відповідно VF=(112,4±1,5)рад/(Tл×м)   і F'33=0,9995F33+0,0005F11= (12,96±0.18)×10-13м/A  . Показано, що кристали TlInS2 є достатньо ефективними магнітооптичними матеріалами серед магнітно-невпорядкованих середовищ.
 

REFERENCES
  1. Kashida S and Kobayashi Y, 1999. X-ray study of the incommensurate phase of TlInS2. J. Phys.: Condens. Matter. 11: 1027–1035. doi:10.1088/0953-8984/11/4/010
  2. Isaaks T G and Feichtner J D, 1975. Growth and optical properties of TlGaSe2 and β-TlInS2. J. Solid State Chem. 14: 260–263. doi:10.1016/0022-4596(75)90030-4
  3. Shim Y, Okada W, Wakita K and Mamedov N, 2007. Refractive indices of layered semiconductor ferroelectrics TlInS2, TlGaS2 and TlGaSe2 from ellipsometric measurements limited to only layer-plane surfaces. J. Appl. Phys. 102: 083537. doi:10.1063/1.2800827
  4. Mustafaeva S N, Ismailov A A and Akhmedzade N D, 2006. Electric properties of TlInS2 single crystals. Semiconduct. Phys., Quant. Electron. & Optoelectron. 9: 82–84.
  5. Allakhverdiev K R, 1999. Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals. Sol. State Commun. 111: 253–257. doi:10.1016/S0038-1098(99)00202-1
  6. Ozdemir S, Suleymanov R A, Allakhverdiev K R, Mikailov F A and Civan E, 1999. Memory effect in layered semiconductor TlInS2 with incommensurate phase. Sol. State Commun. 96: 821–826. doi:10.1016/0038-1098(95)00563-3
  7. Say A, Martynyuk-Lototska I, Adamenko D, Pogodin A, Kokhan O and Vlokh R, 2017. Thermal expansion anisotropy of β-TlInS2 crystals in the course of phase transitions. Phase Trans. 90: 1–8. doi:10.1080/01411594.2017.1341983
  8. Martynyuk-Lototska I, Trach I, Kokhan O and Vlokh R, 2017. Efficient acousto-optic crystal, TlInS2: acoustic and elastic anisotropy. Appl. Opt. 56: 3179–3184. doi:10.1364/AO.56.003179
  9. Lei C, Chen L, Tang Z, Li D, Cheng Z, Tang S and Du Y, 2016. Enhancement of magneto-optical Faraday effects and extraordinary optical transmission in a tri-layer structure with rectangular annular arrays. Opt Lett. 41:729–732.doi:10.1364/OL.41.000729
  10. Krupych O, Adamenko D, Mys O, Grabar A and Vlokh R, 2008. Faraday effect in Sn2P2S6 crystals. Appl. Opt. 47: 6040–6045. doi:10.1364/AO.47.006040
(c) Ukrainian Journal of Physical Optics