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Study of planar waveguide structure of He+ ion-implanted Sn2P2S6 crystal with multiple-angle-of-incidence ellipsometry technique
1Kostruba A., 2Kobec A.P., 3Grabar A.A., 1Vlokh R.

1Institute of Physical Optics, 23 Dragomanov St., 79005 Lviv, Ukraine
2National Scientific Centre “Kharkiv Institute of Physics and Technology”, Institute of Plasma Electronics and New Methods of Acceleration, 1 Academichna St., 61108, Kharkiv, Ukraine
3Institute for Solid State Physics and Chemistry, Uzhgorod National University, 54 Voloshyn St., 88000 Uzhgorod, Ukraine 

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In the present work ion-implanted three-layer single-mode waveguide structure in Sn2P2S6 crystals is obtained. The parameters of this structure are experimentally studied with the ellipsometric technique and simulated using the inverse ellipsometric problem approach. The parameters of all the layers are derived. It is found that a single-mode guiding regime can be reached for the light wavelengths belonging to the spectral region of transparency (530nm<l<1279.9nm). We demonstrate advantages of the ellipsometric method applied for detecting the changes occurring in the Sn2P2S6 crystal structure due to He+ ion implantation.

Keywords: : Sn2P2S6 crystals, He+ ion implantation, ellipsometry, optical waveguides

PACS: 42.82.–m, 42.82.Et, 07.60.Fs, 68.35.Dv
UDC: 535.321.4, 535.016
Ukr. J. Phys. Opt. 11 165-174 
doi: 10.3116/16091833/11/3/165/2010
Received: 17.07.2010

Анотація. У даній роботі отримано іонно-імплантовані, трьохшарові, одномодові  хвилеводи на основі кристалів Sn2P2S6. Параметри цих структур експериментально досліджені еліпсометричним методом та промодельовані розв’язуванням оберненої еліпсометричної задачі. Отримані параметри для всіх трьох шарів. Встановлено, що одномодовий хвилеводний режим може реалізуватись для довжин хвиль оптичного випромінювання 530нм<l<1279.9нм , що належать до області прозорості кристалу. Продемонстровані переваги еліпсометричного методу при встановленні змін, які виникають в кристалах Sn2P2S6 при іонній імплантації іонами He+.
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