Ukrainian Journal of Physical Optics

Number 4, Volume 7, 2006

Optical Properties of Nitrogen-Doped Epitaxial ZnO Layers
Rogozin I.V.

Berdyansk State Pedagogical University, 4 Shmidt St., 71118 Berdyansk, Ukraine

Epitaxial nitrogen-doped ZnO (ZnO:N) films are obtained by the method of radical beam gettering epitaxy. Their optical properties are examinated by means of transmission and photoluminescence (PL) spectroscopy. The as-grown ZnO:N films show high transmittance (about 90%) in the visible range. A peak at 3.31 eV is seen in the low-temperature PL spectrum of the N-doped ZnO films, which is probably due to a neutral acceptor-bound exciton NO. Post-thermal annealing is performed on ZnO:N films in the atomic oxygen conditions. The PL of the annealed samples shows a strong response improvement, when compare with the non-annealed samples. The nature of the donor-acceptor band located at 3.23 eV and the ‘green’ band at 2.56 eV is discussed.

Key words: ZnO, N-doping, PL, intrinsic defects.

PACS: 61.72.Ji, 71.55. Gs, 78.40.Fy, 78.55.Et

doi 10.3116/16091833/7/4/159/2006

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