Ukrainian Journal of Physical Optics

Number 2, Volume 7, 2006

Effect of Nonlinear Exciton-Phonon Interaction on the Intrinsic Optical Bistability in Layered Semiconductors
Derevyanchuk O., Zenkova C., Kramar V., Kramar N.

Optics and Spectroscopy Department, Chernivtsi National University, Chernivtsi, Ukraine

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Theoretical investigation of the role of bending waves in the conditions for observing optical bistability in layered semiconductors is performed using the Green function method. By the example of 2H-polytype of PbI2, we show that efficient exciton scattering by the oscillations of this type leads to a short-wave shift of the frequency region of optical bistability, decrease in the size of this region, widening of temperature interval of its observation, a shift of the hysteresis loop towards higher intensities and a decrease in its height and width.

Key words: optical bistability, layered crystal, bending wave, exciton-phonon interaction

PACS: 71.3S-y1.

doi 10.3116/16091833/7/2/52/2006

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