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Determination of 2D Stress Distribution in Semiconductor
Glass As2Se3 with Infrared Imaging Polarimeter
Krupych O., Smaga I., Vlokh R.
Institute of Physical Optics, 23 Dragomanov Str., 79005
Lviv, Ukraine
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In this paper the optical polarimetric method for determination of inhomogeneous
2D stress distribution in semiconductor samples is presented. The infrared
imaging polarimeter is tested on the example of As2Se3 semiconductor glass
possessing the induced inhomogeneous stresses. The reconstructed distribution
of the shear stress tensor component s6 and
the difference (s1-s2)
of the principal tensor components are in a satisfactory agreement with
those predicted theoretically.
Key words: infrared, imaging polarimetry, semiconductors, mechanical
stress.
PACS: 42.30.-d, 42.25.Lc, 07.57.-c, 42.70.Nq
doi 10.3116/16091833/4/4/187/2003 |
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