Ukrainian Journal of Physical Optics 

Number  4, Volume 4,  2003

Home page

Other articles 
in this issue

Determination of 2D Stress Distribution in Semiconductor Glass As2Se3 with Infrared Imaging Polarimeter 
Krupych O., Smaga I., Vlokh R.

Institute of Physical Optics, 23 Dragomanov Str., 79005 Lviv, Ukraine

download full version

In this paper the optical polarimetric method for determination of inhomogeneous 2D stress distribution in semiconductor samples is presented. The infrared imaging polarimeter is tested on the example of As2Se3 semiconductor glass possessing the induced inhomogeneous stresses. The reconstructed distribution of the shear stress tensor component s6 and the difference (s1-s2) of the principal tensor components are in a satisfactory agreement with those predicted theoretically.

Key words: infrared, imaging polarimetry, semiconductors, mechanical stress.
PACS: 42.30.-d, 42.25.Lc, 07.57.-c, 42.70.Nq

doi 10.3116/16091833/4/4/187/2003

1. Kihara T, 1990. In: Proc. 9th ICEM, Copenhagen.
2. Andrienko YA, Dubovikov MS and Gladun AD, 1992. J. Opt. Soc. Am. A9(10): 1765.
3. Andrienko YA and Dubovikov MS, 1994. J. Opt. Soc. Am. A11 (5): 1628.
4. Krupych O, Berezhnyy I, Vlokh O, Vlokh R, 2003. Imaging polarimeter. Patent of Ukraine, N58696A.
5. Shopa Y, 2000. Ukr. J. Phys. Opt. 1: 90.
6. Krupych OM, Kostyrko ME, Vlokh RO, 2001. Ukr. J. Phys. Opt. 2: 93.
7. Vlokh R, Krupych O, Kostyrko M, Netolya V, Trach I, 2001. Ukr. J. Phys. Opt. 2: 154.
8. Nowacki W, 1970. Teoria Sprezystosci (Theory of Elasticity), “Panst. Wyd. Naukove” Warsaw.


Home | Instructions to Authors | Editorial Board | Meetings & Exhibitions