Ukrainian Journal of Physical Optics

Number 2, Volume 2, June 2001

Raman study of gallium selenide single crystal oxidation
Balitskii O.A., Savchyn V.P., Stakhira J.M., *Yuchymchuk V.O.

Physical Department, L'viv Ivan Franko National University, 50 Dragomanov St., 79005, Lviv, Ukraine
*Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
45 Nauky pr., 03028, Kyiv, Ukraine

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The Raman investigations on thermally oxidized gallium selenide were conducted. It was established that the oxidation of the GaSe involves the formation of a-modification of Ga₂Se₃ at the temperature up to 450 °C. The Ga-(O)₂ complexes are also detected at this temperature but the formation of crystalline gallium oxide takes place at the temperature of 800°C

Key words: III-VI compound, Raman scattering, phase transformations

doi 10.3116/16091833/2/2/81/2001

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