Ukrainian Journal of Physical Optics

Volume 21, Issue 2, 2020

Thermally activated spectroscopy of optical absorption in Bi₁₂SiO₂₀ crystals

¹Panchenko T. and ²Karpova L.

¹O.Honchar Dnipro National University, 72 Gagarin Avenue, 49010 Dnipro, Ukraine panchtv141@gmail.com
²Ukrainian State University of Chemical Technology, 8 Gagarin Avenue, 49010 Dnipro, Ukraine

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Abstract. We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron–phonon interaction for the impurity centres.

Keywords: Bi12SiO20 crystals, Al, Ga and Cr impurities, photo-induced absorption, temperature dependences

UDC: 537.311.1
Ukr. J. Phys. Opt. 21 84-92
doi: 10.3116/16091833/21/2/84/2020
Received: 12.03.2020

Анотація. Запропоновано метод термічно активованої спектроскопії в застосуванні до оптичного поглинання домішок. Метод полягає у вимірюванні температурної залежності оптичного поглинання в широкозонному напівпровідниковому кристалі та аналізі температурної похідної цієї залежності. Згадана методика дає змогу визначити енергії термічної та оптичної активації та силу електрон-фононної взаємодії для домішкових центрів.

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