Home
page
Other articles
in this issue |
Mode hopping and
carrier density fluctuations in semiconductor lasers
M. Jadan
Download this
article
Abstract. We treat the effect of noise on the power and polarization
characteristics of semiconductor lasers within the scope of our earlier
model which considers polarization switching as a successive process of
polarization transformation. We demonstrate that, under particular conditions,
one can observe a stepwise transition between the states with the limiting
values of polarization degree, though the latter remain statistical in
their character. This process requires a certain time for its development,
which cannot be regarded as a laser-system parameter.
Keywords: semiconductor lasers, polarization
switching, fluctuations
PACS: 42.55.Px
UDC: 52-626+621.3.032
Ukr. J. Phys. Opt.
15 17-23
doi: 10.3116/16091833/15/1/17/2014
Received: 26.09.2013
Анотація. В роботі розглянуто вплив
шуму на потужність і поляризаційні характеристики
напівпровідникових лазерів, в межах нашої
попередньої моделі, яка розглядає пере
поляризацію, як послідовний процес трансформації
поляризації. Показано, що, за певних умов,
можна спостерігати поетапний перехід між
станами з граничними значеннями ступеня
поляризації, хоча вони мають статистичний
характер. Цей процес вимагає певного часу
для свого розвитку, який не може розглядатися
як параметр лазерної системи. |
|
REFERENCES
-
Panajotov K and Prati F, 2013. Polarization dynamics of VCSELs, in VCSELs.
Springer Se-ries in Optical Sciences. 166: 181–231.doi: 10.1007/978-3-642-24986-0_6
-
Chang-Hasnain C J, Harbison J P, Hasnain G, Van Lehmen A C, Florez L T
and Stoffel N G, 1991. Dynamic, polarization and transverse mode characteristics
of vertical-cavity surface-emitting lasers. IEEE J. Quantum. Electron.
24: 1402–1409. doi: 10.1109/3.89957
-
Kawaguchi H, 1997. Bistable laser diodes and their applications: state
of art. IEEE J. Select. Topics Quantum. Electron. 3: 1254-1270. doi: 10.1109/2944.658606
-
San Miguel M, Feng Q and Moloney J V, 1995. Light-polarization dynamics
in surface-emitting semiconductor lasers. Phys. Rev. A. 52: 1728–1739.
doi: 10.1103/PhysRevA.52.1728
PMid:9912413
-
Verschaffelt G, Panajotov K, Albert J, Nagler B, Peeters M, Danckaert J,
Veretennicoff I and Thienport H, 2001. Polarization switching in vertical-cavity
surface-emitting lasers: from ex-perimental observations to applications.
Opto-Electron. Rev. 9: 257–268.
-
Tan Y, Zhang S, Ren C and Ren Z, 2009. Self-mixing interference effects
in orthogonally polarized dual-frequency Nd:YAG lasers at different feedback
levels. J. Phys. B. 42: 025401. doi: 10.1088/0953-4075/42/2/025401
-
Jadan M, Burov L I, Gorbatsevich A S and Sokolov E S, 2009. Polarization
switching in sin-gle-mode semiconductor laser. J. Appl. Spectrosc. 76:
678–684. doi: 10.1007/s10812-009-9252-5
-
Jadan M, Burov L I, Gorbatsevich A S and Sokolov E S, 2010. Dynamics of
polarization switching in single-mode injection semiconductor lasers. J.
Appl. Spectrosc. 77: 65–72. doi: 10.1007/s10812-010-9294-8
-
Willemsen M B, Khalid M U F, van Exter M P and Woerdman J P, 1999. Polarization
switch-ing of a vertical-cavity semiconductor laser as a Kramers hopping
problem. Phys. Rev. Lett. 82: 4815–4818. doi: 10.1103/PhysRevLett.82.4815
-
Nagler B, Peeters M, Albert J, Verschaffelt G, Panajotov K, Thienport H,
Veretennicoff I, Danckaert J, Barbay S, Giacomelli G and Marin F, 2003.
Polarization-mode hopping in single-mode vertical-cavity surface-emitting
lasers: Theory and experiment. Phys. Rev. A. 68: 013813. doi: 10.1103/PhysRevA.68.013813
-
Sciamanna M, Masoller C, Abraham N B, Rogister F, Megret P and Blondel
M, 2003. Different regimes of low-frequency fluctuations in vertical-cavity
surface-emitting lasers. J. Opt. Soc. Amer. B. 90: 37–44. doi: 10.1364/JOSAB.20.000037
-
Jadan M, Burov L I and Gorbatsevich A S, 2012. Point model for describing
the polarization parameters of a single-mode semiconductor laser. J. Appl.
Spectrosc. 79: 577–582. doi: 10.1007/s10812-012-9642-y
(c) Ukrainian Journal
of Physical Optics |