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Diffusion layers of zinc selenide with a predominant edge emission
1Makhniy V.P., 1Slyotov M.M., 1Tkachenko I.V., 1Slyotov A.M., 1,2Horley P.P., 3Vorobiev Yu.V., 2González-Hernández J.

1Yuri Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine
2Centro de Investigación en Materiales Avanzados, S.C. (CIMAV) Chihuahua / Monterrey, Miguel de Cervantes 120, 31109 Chihuahua, México
3Laboratorio de Investigación en Materiales, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV), 76230 Querétaro, México,

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Investigations of luminescence in diffusion ZnSe layers have revealed a pro-nounced ‘blue’ band in both p- and n-layers doped with the chemical elements of I-VI groups. We have discussed the nature of acceptor centres, luminescent properties and the mechanisms for radiation recombination in the material under study.

Keywords: zinc selenide, diffusion layers, point defects, luminescence, recombination

PACS: 71.20.Nr, 71.55.Gs, 78.40.Fy, 78.55.Et, 78.66.Hf
UDC: 535.37
Ukr. J. Phys. Opt. 10 206-217 doi: 10.3116/16091833/10/4/206/2009

Received: 24.07.2009

Анотація.  Досліджено люмінесценцію шарів ZnSe, одержаних за методом дифузії. Показано, що існує цілий набір елементів I-VI груп, які дають змогу одержати шари n- та p-типу провідності з ефективним випромінюванням в синьо-голубій області спектру. Розглянуто природу акцепторних центрів, пояснено люмінесцентні властивості, а також механізми випромінювальної рекомбінації.
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