Ukrainian Journal of Physical Optics 

Home page
 
 

Other articles 

in this issue
Diffusion layers of zinc selenide with a predominant edge emission
1Makhniy V.P., 1Slyotov M.M., 1Tkachenko I.V., 1Slyotov A.M., 1,2Horley P.P., 3Vorobiev Yu.V., 2González-Hernández J.

1Yuri Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine
2Centro de Investigación en Materiales Avanzados, S.C. (CIMAV) Chihuahua / Monterrey, Miguel de Cervantes 120, 31109 Chihuahua, México
3Laboratorio de Investigación en Materiales, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV), 76230 Querétaro, México,

download full version

Investigations of luminescence in diffusion ZnSe layers have revealed a pro-nounced ‘blue’ band in both p- and n-layers doped with the chemical elements of I-VI groups. We have discussed the nature of acceptor centres, luminescent properties and the mechanisms for radiation recombination in the material under study.

Keywords: zinc selenide, diffusion layers, point defects, luminescence, recombination

PACS: 71.20.Nr, 71.55.Gs, 78.40.Fy, 78.55.Et, 78.66.Hf
UDC: 535.37
Ukr. J. Phys. Opt. 10 206-217 doi: 10.3116/16091833/10/4/206/2009

Received: 24.07.2009

Анотація.  Досліджено люмінесценцію шарів ZnSe, одержаних за методом дифузії. Показано, що існує цілий набір елементів I-VI груп, які дають змогу одержати шари n- та p-типу провідності з ефективним випромінюванням в синьо-голубій області спектру. Розглянуто природу акцепторних центрів, пояснено люмінесцентні властивості, а також механізми випромінювальної рекомбінації.

REFERENCES
  1. Vavilov V S, 1994. Peculiarities of the physics of wide-band semiconductors and their applications. Uspekhi Fiz. Nauk. 164: 287–295. doi:10.3367/UFNr.0164.199403c.0287
  2. Nedeoglo D D and Simashkevich A V, Electric and luminescent properties of zinc selenide. Chisinau: Stiintsa (1984).
  3. Alferov Zh I, 1998. The history and the future of semiconductor structures. Fiz. Tekhn. Poluprov. 32: 3–19. 
  4. Pichugin I G and Tairov Yu M, Technology of semiconductor devices. Moscow: Vysshaya Shkola (1984). 
  5. Makhniy V P, Arhilyuk L I, Grivul V I, Mel’nyk V V, Slyotov M M, Sobistchanskiy B M and Tkachenko I V, 2006. Prospects of using the wide bandgap II-VI compounds of in short-wave sensors. Sensor Electron. Microsyst. Techolog. 3: 30–34. 
  6. Makhiniy V P, Slyotov M M and Chaban Yu Ya, 2000. Hole conductivity in the crys-tals of zinc selenide doped with the elements of V group from the vapour phase. Pis’ma v Zhurn. Tekhn. Fiz. 26: 13–16. 
  7. Medvedev S A, Ed. Physics and chemistry of AIIBVI. Moscow: Mir (1970). 
  8. Makhniy V P, Slyotov M M and Chaban Yu Ya, 1998. p-ZnSe and p-ZnS crystals emitting in dark-blue and UV spectral regions. Functional Materials. 5: 31–35. 
  9. Arhilyuk L I, Makhniy V P, Slyotov M M, Gorley V V and Tkachenko I V, 2007. Mechanisms of defect formation for ZnSe with isovalent oxygen impurity. Telecom-munication and Radio Engineering. 66: 465–471. doi:10.1615/TelecomRadEng.v66.i5.70
  10. Gribkovskiy V P, Theory of light absorption and emission in semiconductors. Minsk: Nauka i Tekhnika (1975). 
  11. Slyotov M M, 2001. Edge luminescence from zinc selenide doped with isovalent magnesium impurity. Techn. Phys. Lett. 27: 63–64. doi:10.1134/1.1345168
  12. Koh Era and Langer D W, 1970. Luminescence of ZnSe near the band edge under strong laser light excitation. J. Lumin. 1–2: 514–527. doi:10.1016/0022-2313(70)90064-5
  13. Makhniy V P, Slyotov A M and Chaban Yu Ya, 2002. Effect of magnesium isovalent impurity on the temperature stability of blue luminescence in zinc selenide. Techn. Phys. 47: 786–787. doi:10.1134/1.1486205
  14. Fistul’ V I, Atoms of the doping impurity in semiconductors (state and behaviour). Moscow: Fizmatlit (2004). 
  15. Ryzhikov V D, Scintillation crystals of the semiconducting AIIBVI compounds. Ob-taining, properties, and applications. Moscow: NIITEKhIM (1989). 
  16. Makhniy V P and Slyotov A M, 2004. Optical properties of ZnSe:Mg diffusion layers. Ukr. J. Phys. Opt. 5: 136–140. doi:10.3116/16091833/5/4/136/2004
  17. Grivul V I, Makhniy V P and Slyotov M M, 2007. The nature of the edge lumines-cence of the diffusion layers ZnSe:Sn. Fiz. i Tekhn. Poluprov. 41: 806–807. 
  18. Makhniy V P, Slyotov M M, Demych N V and Slyotov A M, Peculiarities of the physical properties of the heterolayers of isovalent replacement of the wide-band II-VI compounds. Abstract booklet of the International scientific conference (Minsk, Belarus, 2005), pp. 385–387.
(c) Ukrainian Journal of Physical Optics