Ukrainian Journal of Physical Optics 

Home page
 
 

Other articles 

in this issue
Optical properties of diffuse ZnSe:Mn layers
Makhniy V.P., Kinzerskaya O.V., Horley P.P., Ul’yanitskiy K.S.

Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine

download full version

It is shown that doping of zinc selenide with Mn atoms from the vapour phase causes appearance of the band peaked at  hw= 2.3 eV in the luminescence and transmission spectra. The intensity of this band changes with the temperature of diffusion annealing and varies after introduction of other doping impurities to the basic substrate, which could be explained by increased solubility of Mn atoms.

Keywords: zinc selenide, magnetic impurity, photoluminescence, transmission

PACS: 78.55.Et
UDC:  535.37
Ukr. J. Phys. Opt. 9 91-96 
doi: 10.3116/16091833/9/2/91/2008
Received: 22.11.2007

REFERENCES

1. Georgiobiany A. N. and Sheinkman M. K. Physics of ?II?VI compounds. Moscow: Nauka (1986).
2. Pichugin I. G. and Tairov Yu. M. Technology of semiconductor devices. Moscow: Vysshaya shkola (1984).
3. Dietl T. Spintronics And Ferromagnetism In Wide-Band-Gap Semiconductors, 27 Int. Conf. on the Phys. of Semicon./ Americ. Inst. of Phys. (2005) p. 56–61.
4. Makhniy V P, Demich M V, and Slyotov M M,  Gorley P P, Vorobiev Yu V and Gonzalez-Hermandez J, 2006. Optical properties of cadmium selenide heterostructures with quantum-scale surface formation. Thin Solid Films. 495: 372–374.
      http://dx.doi.org/10.1016/j.tsf.2005.08.239
5. Makhniy V P, 2005. Specific features of the physical properties of a modified CdTe surface, Semiconductors 39: 792–794.
6. Bulanyj M F, Kovalenko O V, Omel’chenko S O and  Shtambur ? V. Resonance phe-nomena. Dnipropetrovs’k: ART-PRESS. (2006).
7. Tkachenko I V. Mechanisms of defect formations and luminescence in undoped and tellurium doped crystals of zinc selenide. Dissertation for Ph.D. degree in physics and mathematics, Chernivtsi (2005). 
8. Makniy V P, Melnyk V V, Sletov M M,  Kinzerskaya O V, Cvikl B, Korosak D, Gor-ley P N and Horley P P. Optical properties of ZnO:Mn heterolayers with quantum-scale surface formations. Proc. 43rd Intern. Conf. on Microelectronics, Devices and Materials. (2007) p. 85–87.
9. Baranyuk V Ye, Demich M V, Makhnyi V P,  Melnik V V, Malimon I V, Slyotov M M, Sobistchanskiy B M and Stets E V, 2000. Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices. Proc. SPIE 4425: 272–277.
10. Makhniy V P, Demych M V and Slyotov M M, Patent of Ukraine No. 65010A, pub-lished 15.03.2004. 

(c) Ukrainian Journal of Physical Optics