Ukrainian Journal of Physical Optics 

Number  2, Volume 3,  2002

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On the mechanism of radiation-induced optical effects in vitreous As22S3-GeS2  
1Shpotyuk O.I., 1Golovchak R.Ya., 1,2Kovalskiy A.P., 3Pamukchieva V., 3Skordeva E., 3Arsova D.

1Institute of Materials, Scientific Research Company “Carat”, 202, Stryjska Str.,  79031, Lviv, Ukraine 
2National University “Lviv Polytechnics”, 12 Bandera str., 79013, Lviv, Ukraine 
3Institute of Solid State Physics of the Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784, Sofia, Bulgaria

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A coordination defects formation model based on the concept of covalent chemical bond switching was developed for the microstructural explanation of ?-induced optical effects in As2S3-GeS2 chalcogenide glasses. The whole variety of possible destruction-polymerization transformations was considered separately for the “pure” vitreous v-As2S3 and v-GeS2, as well as for the mixed v-As2S3-GeS2 compositions. The topological schemes of the coordination defect formation were proposed, taking into account results obtained by the IR Fourier spectroscopy method of additional reflectivity in 400-200 cm-1 range.

Key words: optical transmittance, chalcogenide vitreous semiconductors, gamma-irradiation

PACS: 78.30.Ly

doi 10.3116/16091833/3/2/134/2002
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